sangdest microelectronics technical data green products data sheet n1047, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn st3 0 100 c STB30100C stf30100c st30100c/STB30100C/stf30100c schottky rectifier applications: switching power supply converters free-wheeling diodes reverse battery protection features: 150 c t j operation center tap configuration ultralow forward voltage drop high purity, high temperature epoxy encapsulation f or enhanced mechanical strength and moisture resistance high frequency operation guard ring for enhanced ruggedness and long term re liability this is a pb ? free device all smc parts are traceable to the wafer lot additional testing can be offered upon request mechanical dimensions: in inches / mm to-220ab case styles st30100c to-220ab STB30100C d 2 pak stf30100c ito-220ab
sangdest microelectronics technical data green products data sheet n1047, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn st3 0 100 c STB30100C stf30100c d 2 pak dimensions in millimeters symbol min. typical max. a 4.55 4.70 4.85 a1 0 0.10 0.25 a2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.27 c 0.36 0.38 0.61 c1 1.17 1.27 1.37 d 8.55 8.70 8.85 d1 6.40 e 10.01 10.16 10.31 e1 7.6 e2 9.98 10.08 10.18 e 2.54 h 14.6 15.1 15.6 l 2.00 2.30 2.70 l1 1.17 1.27 1.40 l2 2.20 l3 0.25bsc e 0 - 8 e1 5 e2 4 e3 4
sangdest microelectronics technical data green products data sheet n1047, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn st3 0 100 c STB30100C stf30100c ito-220ab symbol min. typ. max. a 4.30 4.50 4.70 a1 1.10 1.30 1.50 a2 2.80 3.00 3.20 a3 2.50 2.70 2.90 b 0.50 0.60 0.75 b1 1.10 1.20 1.35 b2 1.50 1.60 1.75 b3 1.20 1.30 1.45 b4 1.60 1.70 1.85 c 0.55 0.60 0.75 d 14.80 15.00 15.20 e 9.96 10.16 10.36 e 2.55 e1 5.10 h1 6.50 6.70 6.90 l 12.70 13.20 13.70 l1 1.60 1.80 2.00 l2 0.80 1.00 1.20 l3 0.60 0.80 1.00 p1( ? ) 3.30 3.50 3.70 p2( ? ) 2.99 3.19 3.39 q 2.50 2.70 2.90 1 5 2 4 3 10 4 5 5 5
sangdest microelectronics technical data green products data sheet n1047, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn st3 0 100 c STB30100C stf30100c marking diagram: where xxxxx is yywwl st = device type b/f = package type 30 = forward current (30a) 100 = reverse voltage (100v) c = configuration ssg = ssg yy = year ww = week l = lot number st30100c STB30100C stf30100c cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping st30100c to-220ab(pb-free) 50pcs / tube STB30100C d 2 pak(pb-free) 800pcs / reel stf30100c ito-220ab(pb-free) 50pcs / tube for information on tape and reel specifications, in cluding part orientation and tape sizes, please ref er to our tape and reel packaging specification. maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 100 v average forward current i f(av) 50% duty cycle @t c =100c, rectangular wave form 30 a peak one cycle non-repetitive surge current (per leg) i fsm 8.3 ms, half sine pulse 200 a
sangdest microelectronics technical data green products data sheet n1047, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn st3 0 100 c STB30100C stf30100c electrical characteristics: characteristics symbol condition typ. max. units v f1 @ 15a, pulse, t j = 25 c 0.70 0.75 v forward voltage drop (per leg)* v f2 @ 15a, pulse, t j = 125 c 0.67 0.70 v reverse current (per leg)* i r1 @v r = rated v r t j = 25 c 0.023 0.5 ma i r2 @v r = rated v r t j = 125 c 3.19 55 ma junction capacitance (per leg) c t @v r = 5v, t c = 25 c f sig = 1mhz 686 800 pf voltage rate of change dv/dt - - 10,000 v/ m s * pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol st30100c STB30100C stf30100c units junction temperature t j -55 to +150 c storage temperature t stg -55 to +150 c maximum thermal resistance junction to case(per leg)* r q jc 2.5 2.5 5.5 c/w approximate weight wt 2.0 1.85 2.0 g case style to-220ab/ d 2 pak / ito-220ab
sangdest microelectronics technical data green products data sheet n1047, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn st3 0 100 c STB30100C stf30100c 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 forward voltage drop (v) instantaneous forward current (a) 0.001 0.010 0.100 1.000 10.000 20 30 40 50 60 70 80 90 100 percent of rated peak reverse voltage (%) instantaneous reverse current (ma) 10 100 1000 10000 5 10 15 20 25 30 35 40 reverse voltage (v) junction capacitance (pf) fig.2-typical reverse characteristics fig.3-typical instantaneous forward voltage charact eristics fig.1-typical junction capacitance tj=125 tj=25 tj=25 tj=25 tj=125
sangdest microelectronics technical data green products data sheet n1047, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn st3 0 100 c STB30100C stf30100c disclaimer: 1- the information given herein, including the spec ifications and dimensions, is subject to change wit hout prior notice to improve product characteristics. before ordering, purchasers are ad vised to contact the smc - sangdest microelectronic s (nanjing) co., ltd sales department for the latest version of the datasheet( s). 2- in cases where extremely high reliability is req uired (such as use in nuclear power control, aerosp ace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices th at feature assured safety or by means of users fail-safe precautions or other arra ngement . 3- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any damages that may result from an accident or any other cause during operation of the users units ac cording to the datasheet(s). smc - sangdest microel ectronics (nanjing) co., ltd assumes no responsibility for any intellectual prop erty claims or any other problems that may result f rom applications of information, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exce eding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or s mc - sangdest microelectronics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplic ated, in any form, in whole or part, without the ex pressed written permission of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the dat asheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safet y nor are they to be applied to that purpose by the ir direct purchasers or any third party. when exporting these products (technologies) , the necessary procedures are to be taken in accor dance with related laws and regulations..
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